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Conference Paper
Quantum Electronics and Laser Science Conference
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Poster Session I (JTuC)

The Position Dependence of Nitrogen in BAC Model with 10 Band Hamiltonian: Band Mixing Effects and Gain in InGaNAs/GaAs Quantum Well Lasers

Yingning Qiu and Judy M. Rorison

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Abstract

An improved band anti-crossing model is presented in which the position of the nitrogen within the quantum well is included. This is found to strongly influence the conduction band levels, the dipole moments and gain.

© 2005 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.0160) Materials : Materials
(160.3380) Materials : Laser materials

Citation
Y. Qiu and J. M. Rorison, "The Position Dependence of Nitrogen in BAC Model with 10 Band Hamiltonian: Band Mixing Effects and Gain in InGaNAs/GaAs Quantum Well Lasers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper JTuC87.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2005-JTuC87


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