Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characteriazed and the absorption coefficient was measured with transmission spectroscopy.
© 2005 Optical Society of America
J. Fu, X. Yu, Y. Kuo, and J. S. Harris, "Extended InGaAs/InGaAs Quantum Structure for Near Infrared Photodetection beyond 1.9µm," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper JWB32.
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