OSA's Digital Library

Optics InfoBase > Conference Papers > QELS > 2005 > JWB > Page JWB32 © 2005 OSA

Conference Paper
Quantum Electronics and Laser Science Conference
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Poster Session II (JWB)

Extended InGaAs/InGaAs Quantum Structure for Near Infrared Photodetection beyond 1.9µm

Junxian Fu, Xiaojun Yu, Yu-Hsuan Kuo, and James S. Harris

View Full Text Article

Acrobat PDF (1168 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characteriazed and the absorption coefficient was measured with transmission spectroscopy.

© 2005 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.1880) Detectors : Detection
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials

J. Fu, X. Yu, Y. Kuo, and J. S. Harris, "Extended InGaAs/InGaAs Quantum Structure for Near Infrared Photodetection beyond 1.9µm," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper JWB32.

Sort:  Journal  |  Reset


References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited