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Conference Paper
Quantum Electronics and Laser Science Conference
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Poster Session II (JWB)

Extended InGaAs/InGaAs Quantum Structure for Near Infrared Photodetection beyond 1.9µm

Junxian Fu, Xiaojun Yu, Yu-Hsuan Kuo, and James S. Harris

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Abstract

Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characteriazed and the absorption coefficient was measured with transmission spectroscopy.

© 2005 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.1880) Detectors : Detection
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials

Citation
J. Fu, X. Yu, Y. Kuo, and J. S. Harris, "Extended InGaAs/InGaAs Quantum Structure for Near Infrared Photodetection beyond 1.9µm," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper JWB32.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2005-JWB32


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