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Conference Paper
Quantum Electronics and Laser Science Conference
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Joint CLEO/QELS Poster Session III (JThC)

Optical Mixing in InP-Based High-Electron Mobility Transistors by Use of a Focused Laser Beam

Hiroshi Murata, Noyiyo Kobayashi, Yasuyuki Okamura, Toshihiko Kosugi, and Takatomo Enoki

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Abstract

Optical mixing in InP-based ultra-fast high-electron mobility transistors (HEMTs) using a focused laser beam onto the surface was studied in detail. Position-dependent optical responses in the HEMT and optical signal detection at 10GHz were demonstrated.

© 2006 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.5160) Optical devices : Photodetectors
(350.0350) Other areas of optics : Other areas of optics
(350.4010) Other areas of optics : Microwaves

Citation
H. Murata, N. Kobayashi, Y. Okamura, T. Kosugi, and T. Enoki, "Optical Mixing in InP-Based High-Electron Mobility Transistors by Use of a Focused Laser Beam," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JThC62.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2006-JThC62


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