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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JTuD14

Magnetic field orientation dependence of the terahertz radiation from GaAs/AlGaAs modulation-doped structures with varying AlGaAs spacer-layer thickness

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Abstract

The magnetic field orientation dependence of the terahertz radiation intensity from GaAs/AlGaAs modulation-doped structures with varying spacer thickness was investigated. Results are analyzed in the context of junction electric field, carrier mobility, and interface roughness.

© 2006 Optical Society of America

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