We investigate on the photoluminescence spatial unhomogeneities of InGaN/GaN interface with a polarization modulation scanning near-field tunneling microscope. We could demonstrate for the first time nanometer sized domains that present polarization-changing properties.
© 2006 Optical Society of America
R. Micheletto, D. Yamada, Y. Kawakami, and M. Allegrini, "The Study of InGaN SQW Materials with Polarization Modulation SNOM," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JTuD49.
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