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Conference Paper
Quantum Electronics and Laser Science Conference
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
CLEO/QELS Symposium III: Detectors (JTuF)

Design, Fabrication and Characterisation of InGaAs/InP Single-Photon Avalanche Diode Detectors

Ryan E. Warburton, Sara Pellegrini, Gerald S. Buller, Lionel Tan, Jo Shien Ng, Andrey Krysa, Kris Groom, John P. David, and Sergio Cova

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Abstract

This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.

© 2006 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.5160) Detectors : Photodetectors
(040.5570) Detectors : Quantum detectors

Citation
R. E. Warburton, S. Pellegrini, G. S. Buller, L. Tan, J. S. Ng, A. Krysa, K. Groom, J. P. David, and S. Cova, "Design, Fabrication and Characterisation of InGaAs/InP Single-Photon Avalanche Diode Detectors," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JTuF6.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2006-JTuF6


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