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Conference Paper
Quantum Electronics and Laser Science Conference
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Joint CLEO/QELS Poster Session II (JWB)

85% Power Conversion Efficiency 975-nm Broad Area Diode Lasers at - 50°C, 76 % at 10°C

Paul A. Crump, Mike Grimshaw, Jun Wang, Weimin Dong, Shiguo Zhang, Suhit Das, Jason Farmer, Mark DeVito, Lei S. Meng, and Jason K. Brasseur

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Abstract

Optimized single stripe 975-nm broad area devices deliver 76% power conversion efficiency at 10°C. Cooling the material leads to 85% efficiency at -50°C. External differential quantum efficiency is the dominant term.

© 2006 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.0230) Optical devices : Optical devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

Citation
P. A. Crump, M. Grimshaw, J. Wang, W. Dong, S. Zhang, S. Das, J. Farmer, M. DeVito, L. S. Meng, and J. K. Brasseur, "85% Power Conversion Efficiency 975-nm Broad Area Diode Lasers at - 50°C, 76 % at 10°C," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB24.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2006-JWB24


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