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Conference Paper
Quantum Electronics and Laser Science Conference
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Joint CLEO/QELS Poster Session II (JWB)

2-µm InGaSb/AlGaAsSb Multiple-Quantum-Well Light-Emitting Diodes

Nathan J. Withers, Hongjun Cao, Gennady A. Smolyakov, Ron Kaspi, and Marek Osinski

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Abstract

We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 µm by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates.

© 2006 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

Citation
N. J. Withers, H. Cao, G. A. Smolyakov, R. Kaspi, and M. Osinski, "2-µm InGaSb/AlGaAsSb Multiple-Quantum-Well Light-Emitting Diodes," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB76.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2006-JWB76


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