OSA's Digital Library

Optics InfoBase > Conference Papers > QELS > 2006 > JWB > Page JWB77 © 2006 OSA

Conference Paper
Quantum Electronics and Laser Science Conference
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Joint CLEO/QELS Poster Session II (JWB)

Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-Emitting Diodes

Yi-An Chang, Hao-Chung Kuo, and Tien-Chang Lu

View Full Text Article

Acrobat PDF (106 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

© 2006 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

Citation
Y. Chang, H. Kuo, and T. Lu, "Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-Emitting Diodes," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB77.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2006-JWB77


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited