A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.
© 2006 Optical Society of America
Y. Chang, H. Kuo, and T. Lu, "Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-Emitting Diodes," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB77.
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