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Conference Paper
Quantum Electronics and Laser Science Conference
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Spins in Semiconductors: Currents and Coherence (QME)

Transient Spin-gratings of Itinerant Electrons in Lightly-doped GaAs Quantum Wells

Sam G. Carter, Zhigang Chen, Steven T. Cundiff, Andrew S. Huntington, and Larry A. Coldren

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Abstract

Spin gratings lasting longer than the carrier lifetime are measured in lightly n-doped quantum wells. In a magnetic field, precession of the grating is observed, and diffusion rates are determined by varying the grating period.

© 2006 Optical Society of America

OCIS Codes
(300.0300) Spectroscopy : Spectroscopy
(300.2570) Spectroscopy : Four-wave mixing
(320.0320) Ultrafast optics : Ultrafast optics
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Citation
S. G. Carter, Z. Chen, S. T. Cundiff, A. S. Huntington, and L. A. Coldren, "Transient Spin-gratings of Itinerant Electrons in Lightly-doped GaAs Quantum Wells," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper QME6.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2006-QME6


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