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Conference Paper
Quantum Electronics and Laser Science Conference
San Jose, California United States
May 4-9, 2008
ISBN: 978-1-55752-859-9
CLEO/QELS Poster Session III (JThA)

GaAs-Based Buried Heterostructure Laser Incorporating an InGaP Opto-Electronic Confinement Layer

Kristian M. Groom, Ryan R. Alexander, David T. Childs, Andrey B. Krysa, John S. Roberts, Amr S. Helmy, and Richard A. Hogg

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Abstract

We demonstrate a novel process for fabrication of GaAs-based single lateral mode buried heterostructure lasers using a single epitaxial overgrowth in which an n-doped InGaP layer is utilized for both electrical and optical confinement.

© 2008 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.5960) Optoelectronics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

Citation
K. M. Groom, R. R. Alexander, D. T. Childs, A. B. Krysa, J. S. Roberts, A. S. Helmy, and R. A. Hogg, "GaAs-Based Buried Heterostructure Laser Incorporating an InGaP Opto-Electronic Confinement Layer," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JThA3.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2008-JThA3


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