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Conference Paper
Quantum Electronics and Laser Science Conference
San Jose, California United States
May 4-9, 2008
ISBN: 978-1-55752-859-9
CLEO/QELS Poster Session III (JThA)

Blue and Yellow Electroluminescence of MOSLED Made on Si-Rich SiO<sup>x</sup>Grown by PECVD with Detuning Buried Si Nanoclusters Size

Chung-Hsiang Chang and Gong-Ru Lin

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Abstract

Blue and yellow electroluminescence of MOSLEDs made on Si-rich SiO<sup>x</sup>with buried Si nanocrystals of different sizes controlled with minimum hydrogen passivation are demonstrated by PECVD at different N<sup>2</sup>O/SiH<sup>4</sup>ratio and total fluence.

© 2008 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.6040) Detectors : Silicon
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

Citation
C. Chang and G. Lin, "Blue and Yellow Electroluminescence of MOSLED Made on Si-Rich SiO<sup>x</sup>Grown by PECVD with Detuning Buried Si Nanoclusters Size," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JThA96.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2008-JThA96


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