We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
© 2010 The Optical Society
(230.0230) Optical devices : Optical devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence
G. Sun, S. K. Tripathy, Y. J. Ding, G. Liu, H. Zhao, G. S. Huang, N. Tansu, and J. B. Khurgin, "Photoluminescence Quenching Due to Relocation of Electrons in GaN/AlN Asymmetric-Coupled Quantum Wells," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optical Society of America, 2010), paper QThC2.
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