Ultrafast Optical Response and Transient Population Inversion of Photoexcited Ge/SiGe Quantum Wells

S. Chatterjee; C. Lange; N. S. Köster; M. Schäfer; M. Kira; S. W. Koch; D. Chrastina; G. Isella; H. von Känel; H. Sigg

doi:10.1364/QELS.2010.QThC7

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper QThC7
•https://doi.org/10.1364/QELS.2010.QThC7

Ultrafast Optical Response and Transient Population Inversion of Photoexcited Ge/SiGe Quantum Wells

S. Chatterjee, C. Lange, N. S. Köster, M. Schäfer, M. Kira, S. W. Koch, D. Chrastina, G. Isella, H. von Känel, and H. Sigg

Quantum Electronics and Laser Science Conference 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

From the session
Low Dimensional Quantum Systems (QThC)

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S. Chatterjee, C. Lange, N. S. Köster, M. Schäfer, M. Kira, S. W. Koch, D. Chrastina, G. Isella, H. von Känel, and H. Sigg, "Ultrafast Optical Response and Transient Population Inversion of Photoexcited Ge/SiGe Quantum Wells," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper QThC7.

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Abstract

The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate are investigated by pump-probe spectroscopy. Pronounced nonequilibrium effects in the relaxation dynamics and transient gain are observed and analyzed using a microscopic many-body theory.

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