The emission of THz-radiation pulses from binary and ternary narrow bandgap semiconductors is discussed. GaxIn1-xAs:Fe is a THz-emitter material for time-domain THz-systems with potentially 1mW of average THz-radiation power at MHz repetition rates.
© 2011 OSA
(160.6000) Materials : Semiconductor materials
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(300.6495) Spectroscopy : Spectroscopy, teraherz
I. Wilke, S. Sengupta, and P. Dutta, "Narrow Bandgap Semiconductor Based THz-Emitters," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JThB107.
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