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Conference Paper
Quantum Electronics and Laser Science Conference
Baltimore, Maryland United States
May 1-6, 2011
ISBN: 978-1-55752-910-7
Nonlinear and Quantum Science and Measurements Joint Poster Session (JThB)

Narrow Bandgap Semiconductor Based THz-Emitters

Ingrid Wilke, Suranjana Sengupta, and Partha Dutta  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_AT.2011.JThB107


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Abstract

The emission of THz-radiation pulses from binary and ternary narrow bandgap semiconductors is discussed. GaxIn1-xAs:Fe is a THz-emitter material for time-domain THz-systems with potentially 1mW of average THz-radiation power at MHz repetition rates.

© 2011 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(300.6495) Spectroscopy : Spectroscopy, teraherz

Citation
I. Wilke, S. Sengupta, and P. Dutta, "Narrow Bandgap Semiconductor Based THz-Emitters," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JThB107.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2011-JThB107


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