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New generation of Distributed Bragg Reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications

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Abstract

We report innovative highly reflective DBR structures based on the novel material BAlN. An experimental BAlN/AlN DBRs demonstrated a reflectivity of 60% and 82% at wavelengths of 282 nm and 311nm respectively.

© 2011 Optical Society of America

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