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Conferences > QELS > 2011 > QMB > QMB4

Ultrafast Dynamics of Semiconductor Interband Transitions in THz Fields up to 4 MV/cm

F. Junginger, O. Schubert, C. Schmidt, S. Mährlein, B. Mayer, A. Sell, R. Huber, and A. Leitenstorfer

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Abstract

Phase-locked multi-THz transients bias semiconductors far above the usual threshold for dielectric breakdown. Few-cycle NIR pulses synchronized to the THz transients on an as-timescale, probe interband transitions under electric fields of 4 MV/cm.

© 2011 Optical Society of America

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