Abstract
The intensity dependence of optically-induced injection currents in semiconductor quantum wells is investigated numerically. Oscillatory behavior of the electron charge current transients as function of intensity and time is predicted and explained.
© 2011 Optical Society of America
PDF ArticleMore Like This
I. Rumyantsev and J. E. Sipe
QThF2 Quantum Electronics and Laser Science Conference (CLEO:FS) 2005
R.D.R Bhat, F. Nastos, Ali Najmaie, and J.E. Sipe
ThB2 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) 2002
J.E. Sipe, R.D.R. Bhat, Ali Najmaie, F. Nastos, Y. Kerachian, H.M. van Driel, Arthur L. Smirl, Martin J. Stevens, and X.Y. Pan
IThK4 International Quantum Electronics Conference (IQEC) 2004