Add to BibSonomyAbstract
The feasibility of an all-semiconductor plasmonic structure is studied using highly doped InAs for Mid infrared (MIR) wavelength range. We proposed an all-semiconductor active plasmonic system on-a-chip with integrated plasmonic source, waveguide, and detector.
© 2011 Optical Society of America
PDF ArticleMore Like This
Mid-IR Plasmonics with Engineered Semiconductor Metals
S. Law, C. Roberts, S. Inampudi, A. Rosenberg, V. Podolskiy, and D. Wasserman
OW1D.3 Workshop on Optical Plasmonic Materials (OPM) 2014
Mid-infrared direct injection and sub-wavelength focusing of designer’s surface plasmons polaritons
A. Bousseksou, J-P Tetienne, R. Colombelli, A. Babuty, I. Moldovan-Doyen, Y. De Wilde, G. Beaudoin, and I. Sagnes
QTuA2 Quantum Electronics and Laser Science Conference (CLEO:FS) 2011
Silicon Mid-Infrared Photonic Integrated Circuits
Richard Soref
IWE1 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2011