In this study, the APSYS simulation results show that selectively-graded-composition multi-quantum barriers (SGQB) could improve the hole transport in active region. As a result, efficiency droop in InGaN/GaN LEDs is improved by SGQB.
© 2012 OSA
D. Lin, C. Wang, S. Chang, P. Ku, Y. Lan, H. Kuo, T. Lu, S. Wang, and C. Chang, "Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (Optical Society of America, 2012), paper JTh2A.73.
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