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Conference Paper
Quantum Electronics and Laser Science Conference
San Jose, California United States
May 6-11, 2012
ISBN: 978-1-55752-943-5
Poster Session III (JTh2A)

Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation

Da-Wei Lin, Chao-Hsun Wang, Shih-Pang Chang, Pu-Hsih Ku, Yu-Pin Lan, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, and Chun-Yen Chang  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_AT.2012.JTh2A.73


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Abstract

In this study, the APSYS simulation results show that selectively-graded-composition multi-quantum barriers (SGQB) could improve the hole transport in active region. As a result, efficiency droop in InGaN/GaN LEDs is improved by SGQB.

© 2012 OSA

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(230.3670) Optical devices : Light-emitting diodes

Citation
D. Lin, C. Wang, S. Chang, P. Ku, Y. Lan, H. Kuo, T. Lu, S. Wang, and C. Chang, "Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (Optical Society of America, 2012), paper JTh2A.73.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2012-JTh2A.73


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