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Optics InfoBase > Conference Papers > QELS > 2012 > JTh4J > Page JTh4J.2 © 2012 OSA

Conference Paper
Quantum Electronics and Laser Science Conference
San Jose, California United States
May 6-11, 2012
ISBN: 978-1-55752-943-5
Lighting and Energy (JTh4J)

Semipolar (20-2-1) Blue and Green InGaN Light-Emitting Diodes

Yuji Zhao, Chia-Yen Huang, Shinichi Tanaka, Chih-Chien Pan, Kenji Fujito, Daniel Feezell, James S. Speck, Steven DenBaars, and Shuji Nakamura  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_AT.2012.JTh4J.2


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Abstract

Semipolar (20-2-1) light-emitting diodes are demonstrated with high optical polarization ratio, high indium incorporation rate, small wavelength shift and narrow spectrum width. These advantages resulted in LEDs with high efficiency and low droop.

© 2012 OSA

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(230.3670) Optical devices : Light-emitting diodes
(230.5440) Optical devices : Polarization-selective devices

Citation
Y. Zhao, C. Huang, S. Tanaka, C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20-2-1) Blue and Green InGaN Light-Emitting Diodes," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (Optical Society of America, 2012), paper JTh4J.2.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2012-JTh4J.2


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