Suppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.
© 2012 OSA
P. Bhattacharya, A. Das, M. Jankowski, S. Bhowmick, C. Lee, and S. Jahangir, "Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (Optical Society of America, 2012), paper QM1G.4.
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