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Conference Paper
Radiative Processes and Dephasing in Semiconductors
Coeur d' Alene, Idaho United States
February 2, 1998
ISBN: 1-55752-525-0
Lower Dimensional Structures I (RMB)

InAs/GaAs quantum dot injection lasers

M. Grundmann, N. N. Ledenstov, F. Heinrichsdorff, M.-H. Mao, D. Bimber, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, and J. A. Lott

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Abstract

Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. Edge emitting and vertical cavity surface emitting lasers have been fabricated with some of their properties already exceeding the performance of conventional semiconductor diode lasers based on quantum wells.

© 1998 Optical Society of America

OCIS Codes
(140.3430) Lasers and laser optics : Laser theory
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers

Citation
M. Grundmann, N. N. Ledenstov, F. Heinrichsdorff, M. -. Mao, D. Bimber, V. M. Ustinov, P. S. Kop'ev, Z. I. Alferov, and J. A. Lott, " InAs/GaAs quantum dot injection lasers," in Radiative Processes and Dephasing in Semiconductors, D. Citrin, ed., Vol. 18 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1998), paper RMB5.
http://www.opticsinfobase.org/abstract.cfm?URI=RPDS-1998-RMB5


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