Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. Edge emitting and vertical cavity surface emitting lasers have been fabricated with some of their properties already exceeding the performance of conventional semiconductor diode lasers based on quantum wells.
© 1998 Optical Society of America
M. Grundmann, N. N. Ledenstov, F. Heinrichsdorff, M. -. Mao, D. Bimber, V. M. Ustinov, P. S. Kop'ev, Z. I. Alferov, and J. A. Lott, " InAs/GaAs quantum dot injection lasers," in Radiative Processes and Dephasing in Semiconductors, D. Citrin, ed., Vol. 18 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1998), paper RMB5.
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