Active mode locking of the far-infrared p-Ge laser is achieved via gain modulation with an rf electric field applied at one end of the crystal parallel to the Voigt-configured magnetic field. A small intrinsic voltage is observed between the rf contacts during lasing which significantly impairs the gain and also the achievable intensity and duration of mode-locked pulses. This voltage is directly compensated by applying a bias to the rf contacts. First results give mode-locked pulse durations of ~200 ps.
© 1998 Optical Society of America
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(300.6270) Spectroscopy : Spectroscopy, far infrared
A. V. Muravjov, R. C. Strijbos, C. J. Fredricksen, H. Weidner, W. Trimble, A. Jamison, S. G. Pavlov, V. N. Shastin, and R. E. Peale, " Mode-locked far-infrared p-Ge laser using and offset rf electric field for gain modulation," in Radiative Processes and Dephasing in Semiconductors, D. Citrin, ed., Vol. 18 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1998), paper RTuD2.
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