We present time-resolved THz transmission measurements on radiation damaged InP using an optical pump - THz probe experimental setup. From these measurements we can determine the ultrashort electron Lifetimes in the conduction band. The photoexcited carriers undergo fast trapping in less than a picosecond with recombination taking place on longer timescales. For highly damaged samples the recombination dynamics can be explained only by taking into account an Auger assisted trapping process.
© 1998 Optical Society of America
(160.6000) Materials : Semiconductor materials
(300.6340) Spectroscopy : Spectroscopy, infrared
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
C. Messner, H. Kostner, R. A. Hoepfel, and K. Unterrainer, " Ultrafast THz transmission spectroscopy on proton bombarded InP," in Radiative Processes and Dephasing in Semiconductors, D. Citrin, ed., Vol. 18 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1998), paper RTuD4.