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GaN LEDs on silicon

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Abstract

The increasing demand of LEDs for mass applications as display backlights and incandescent lighting applications is currently difficult to be satisfied for the latter at reasonable price due to the high cost of high brightness LED modules. One essential part of this cost is the cost of material growth, typically performed by metalorganic chemical vapor phase epitaxy (MOVPE). Here several issues are presently limiting a fast reduction in manufacturing cost: substrate diameter (often 2 inch, max. 4 inch), substrate bow, substrate type (typically sapphire which is expensive at 150 mm diameter and above), homogeneity and yield, and throughput of MOVPE equipment.

© 2010 Optical Society of America

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