Mid ultraviolet light emitting diodes were pseudomorphically grown on bulk AlN substrates. Devices stressed at 100mA show minimal power decay for over 1000 hours. 66mW output power is achieved at continuous wave current of 300mA.
© 2013 OSA
J. (J. ) Chen, "High Power Pseudomorphic Mid Ultraviolet Light Emitting Diodes with Improved Efficiency and Lifetime," in Renewable Energy and the Environment, OSA Technical Digest (online) (Optical Society of America, 2013), paper DM2E.2.
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