Surface chemical and local electronic properties of AlxGa1-xN epi-layers grown by MOCVD

Shuchang Wang; Xiong Zhang; Hongquan Yang; Yiping Cui

doi:10.1364/SOLED.2014.DW2C.2

Light, Energy and the Environment
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper DW2C.2
•https://doi.org/10.1364/SOLED.2014.DW2C.2

Surface chemical and local electronic properties of Al_xGa_1-xN epi-layers grown by MOCVD

Shuchang Wang, Xiong Zhang, Hongquan Yang, and Yiping Cui

Solid-State and Organic Lighting 2014

Canberra Australia
2–5 December 2014
ISBN: 978-1-55752-756-1

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S. Wang, X. Zhang, H. Yang, and Y. Cui, "Surface chemical and local electronic properties of AlxGa1-xN epi-layers grown by MOCVD," in Light, Energy and the Environment, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper DW2C.2.

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Abstract

The surface chemical state and local electronic structure of Al_xGa_1-xN (x=0~0.45) epi-layers have been systematically investigated by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) spectroscopy. It was identified that the Ga-O components were converted to Al-O components when the Al_xGa_1-xN sample was exposed to air. The EXAFS analysis also reveals that the Ga-N and Ga-Al bond lengths are independent of the Al composition, whereas the Ga-Ga bond length is a function of Al composition.

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