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Characteristics of Terahertz Antenna Pulsed Sources Made on Fe-Implanted InGaAsP/InP Photoconductive Materials

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Abstract

Pulsed terahertz emitters were fabricated on Fe-implanted InGaAsP/InP photoconductive materials. The terahertz signals are detected by electro-optic sampling using fs-pulse excitation at 790 nm or at 1.55 µm. Characteristics of this new terahertz pulsed source are discussed.

© 2011 Optical Society of America

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