OSA's Digital Library

Optics InfoBase > Conference Papers > SumSession > 2011 > Th > Page Th16 © 2011 OSA

Conference Paper
CIOMP-OSA Summer Session: Lasers and Their Applications
Changchun China
July 31, 2011 - August 5, 2011
Thursday (Th)

High-Brightness 850 nm Tapered Laser Diodes

Ye Yang, Yun Liu, Li Qin, Jinlong Zhang, Yongqiang Ning, and Lijun Wang


View Full Text Article

Acrobat PDF (1072 KB) Open Access Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the nearly diffraction-limited beam quality has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW. The electro-optical properties of tapered lasers are also discussed. The results reported in this paper may become a step forward to new applications of tapered diode lasers.

© 2011 The Optical Society

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3280) Lasers and laser optics : Laser amplifiers
(140.3295) Lasers and laser optics : Laser beam characterization

Y. Yang, Y. Liu, L. Qin, J. Zhang, Y. Ning, and L. Wang, "High-Brightness 850 nm Tapered Laser Diodes," in International Summer Session: Lasers and Their Applications, (Optical Society of America, 2011), paper Th16.

Sort:  Journal  |  Reset


References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited