High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the nearly diffraction-limited beam quality has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW. The electro-optical properties of tapered lasers are also discussed. The results reported in this paper may become a step forward to new applications of tapered diode lasers.
© 2011 The Optical Society
Y. Yang, Y. Liu, L. Qin, J. Zhang, Y. Ning, and L. Wang, "High-Brightness 850 nm Tapered Laser Diodes," in International Summer Session: Lasers and Their Applications, (Optical Society of America, 2011), paper Th16.
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