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Conference Paper
CIOMP-OSA Summer Session: Lasers and Their Applications
Changchun China
July 31, 2011 - August 5, 2011
Thursday (Th)

High-Brightness 850 nm Tapered Laser Diodes

Ye Yang, Yun Liu, Li Qin, Jinlong Zhang, Yongqiang Ning, and Lijun Wang

http://dx.doi.org/10.1364/SUMSESSION.2011.Th16


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Abstract

High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the nearly diffraction-limited beam quality has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW. The electro-optical properties of tapered lasers are also discussed. The results reported in this paper may become a step forward to new applications of tapered diode lasers.

© 2011 The Optical Society

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3280) Lasers and laser optics : Laser amplifiers
(140.3295) Lasers and laser optics : Laser beam characterization

Citation
Y. Yang, Y. Liu, L. Qin, J. Zhang, Y. Ning, and L. Wang, "High-Brightness 850 nm Tapered Laser Diodes," in International Summer Session: Lasers and Their Applications, (Optical Society of America, 2011), paper Th16.
http://www.opticsinfobase.org/abstract.cfm?URI=SumSession-2011-Th16


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