Application of optical normalized reflectance and reflectance anisotropy spectroscopy in MOVPE growth of AlGaAs layers

Jianwei Zhang; Jianwei Zhang; Yongqiang Ning; Yugang Zeng; Huawei Xu; Huawei Xu; Jian Zhang; Jian Zhang; Lijie Wang; Lijie Wang

doi:10.1364/SUMSESSION.2011.Tu20

International Summer Session: Lasers and Their Applications
(Optica Publishing Group, 2011),
paper Tu20
•https://doi.org/10.1364/SUMSESSION.2011.Tu20

Application of optical normalized reflectance and reflectance anisotropy spectroscopy in MOVPE growth of AlGaAs layers

Jianwei Zhang, Yongqiang Ning, Yugang Zeng, Huawei Xu, Jian Zhang, and Lijie Wang

CIOMP-OSA Summer Session: Lasers and Their Applications 2011

Changchun China
31 July–5 August 2011
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J. Zhang, Y. Ning, Y. Zeng, H. Xu, J. Zhang, and L. Wang, "Application of optical normalized reflectance and reflectance anisotropy spectroscopy in MOVPE growth of AlGaAs layers," in International Summer Session: Lasers and Their Applications, (Optica Publishing Group, 2011), paper Tu20.

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Abstract

The growth process analysis of AlGaAs using time resolved optical normalized reflectance (NR) and reflectance anisotropy spectroscopy (RAS) was carried out. Suitable photon energy for monitoring was got from the dependence of NR and RAS on monitoring energies. Then in-situ monitoring of time resolved NR and RAS during MOVPE growth was conducted to analyze the dependences of NR and RAS on Al composition and growth rate.

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