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Conference Paper
CIOMP-OSA Summer Session: Lasers and Their Applications
Changchun China
July 31, 2011 - August 5, 2011
Tuesday (Tu)

Application of optical normalized reflectance and reflectance anisotropy spectroscopy in MOVPE growth of AlGaAs layers

Jianwei Zhanga, Yongqiang Ning, Yugang Zeng, Huawei Xu, Jian Zhang, and Lijie Wang

http://dx.doi.org/10.1364/SUMSESSION.2011.Tu20


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Abstract

The growth process analysis of AlGaAs using time resolved optical normalized reflectance (NR) and reflectance anisotropy spectroscopy (RAS) was carried out. Suitable photon energy for monitoring was got from the dependence of NR and RAS on monitoring energies. Then in-situ monitoring of time resolved NR and RAS during MOVPE growth was conducted to analyze the dependences of NR and RAS on Al composition and growth rate.

© 2011 The Optical Society

OCIS Codes
(000.2190) General : Experimental physics
(160.6000) Materials : Semiconductor materials

Citation
J. Zhanga, Y. Ning, Y. Zeng, H. Xu, J. Zhang, and L. Wang, "Application of optical normalized reflectance and reflectance anisotropy spectroscopy in MOVPE growth of AlGaAs layers," in International Summer Session: Lasers and Their Applications, (Optical Society of America, 2011), paper Tu20.
http://www.opticsinfobase.org/abstract.cfm?URI=SumSession-2011-Tu20


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