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Subpicosecond Time-Resolved Photoluminescence of Carrier Transfer in AlGaN Using Difference-Frequency Generation

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Abstract

Ultraviolet photoluminescence from AlxGa1-xN epilayers exhibiting strong carrier localization is time-resolved with system response down to 300 fs using optical gating by frequency downconversion in a nonlinear crystal.

© 2006 Optical Society of America

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