Postanalyses of an optical multilayer interference filter using numerical reverse synthesis and Rutherford backscattering spectrometry

Naba Kishore Sahoo; Sanjiv Kumar; Raj Bahadur Tokas; Shuvendu Jena; Sudhakar Thakur; Gundlapally Laxmi Narasimha Reddy

doi:10.1364/AO.52.002102

Applied Optics
Vol. 52,
Issue 10,
pp. 2102-2115
(2013)
•https://doi.org/10.1364/AO.52.002102

Postanalyses of an optical multilayer interference filter using numerical reverse synthesis and Rutherford backscattering spectrometry

Naba Kishore Sahoo, Sanjiv Kumar, Raj Bahadur Tokas, Shuvendu Jena, Sudhakar Thakur, and Gundlapally Laxmi Narasimha Reddy

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Naba Kishore Sahoo, Sanjiv Kumar, Raj Bahadur Tokas, Shuvendu Jena, Sudhakar Thakur, and Gundlapally Laxmi Narasimha Reddy, "Postanalyses of an optical multilayer interference filter using numerical reverse synthesis and Rutherford backscattering spectrometry," Appl. Opt. 52, 2102-2115 (2013)

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Table of Contents Category
- Thin Films
Optics & Photonics Topics
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The topics in this list come from the Optics and Photonics Topics applied to this article.

About this Article
History
- Original Manuscript: January 7, 2013
- Revised Manuscript: February 17, 2013
- Manuscript Accepted: February 21, 2013
- Published: March 27, 2013

Abstract

Post nondestructive analyses of an all-dielectric multilayer Fabry–Perot interference filter developed through a reactive electron beam deposition process have been carried out through numerical reverse engineering of transmission spectra, Rutherford backscattering spectroscopy and quartz crystal monitoring data to derive multilayer geometry, deposited layer thicknesses, densities, refractive indices, compositions, and stoichiometry. These techniques are collectively used to fulfill the missing links with complementary and some supplementary information to inverse synthesize the multilayer geometry. During this investigation it is distinctly understood that the factors associated with real-time deposition have significantly influenced the microscopic parameters, namely, the densities and refractive indices of ${TiO}_{2}$ and ${SiO}_{2}$ layers. This in turn influenced the layers’ geometric (physical) thicknesses during automated quarter-wave optical layer monitoring and consequently affected the experimental spectral characteristics. The role of oxygen has been observed to be significant in controlling the mass densities of these refractory oxide layers. It is further noticed that the layer density values have been significantly perturbed whether the associated ${TiO}_{2}$ or ${SiO}_{2}$ oxide dielectric films are substoichiometric (oxygen-deficient), stoichiometric, or superstoichiometric (oxygen-enriched).

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RBS Experimental Analyses Data
Layer No.	Films	RBS Areal Density	RBS Normalized ${Ti}_{x} O_{1 - x}$ ${Si}_{x} O_{1 - x}$ $(x) : (1 - x)$	Ti:O and Si:O Molecular Fractions $3 [x : (1 - x)]$	Layer Thickness (nm)	Densities ( $gm / CC$ ) ${Ti}_{1 \pm δ} O_{2 \pm δ}$ & ${Si}_{1 \pm δ} O_{2 \pm δ}$ [Reported Bulk Values: ${TiO}_{2} (anatase) = 3.84$ & ${SiO}_{2} = 2.2$ ]	Molecular Weight of ${Ti}_{x} O_{1 - x}$ & ${Si}_{x} O_{1 - x}$ [ ${TiO}_{2} = 79.9$ & ${SiO}_{2} = 60.09$ ]	( $y$ )Equalized Oxygen Fraction ${TiO}_{y}$ & ${SiO}_{y}$	( $Δ$ )Equalized OxygenDeviation ${TiO}_{2 \pm Δ}$ & ${SiO}_{2 \pm Δ}$	Films Stoichiometry ${Ti}_{1 \pm δ} O_{2 \pm δ}$ & ${Si}_{1 \pm δ} O_{2 \pm δ}$
Substrate
1	${TiO}_{2}$	358.0	0.35:0.65	1.05:1.95	45.3	3.6	77.6	1.9	$- 0.1$	${Ti}_{1.05} O_{1.95}$
2	${SiO}_{2}$	302.0	0.28:0.72	0.84:2.16	57.5	1.7	69.2	2.6	$+ 0.6$	${Si}_{0.84} O_{2.16}$
3	${TiO}_{2}$	457.0	0.27:0.73	0.81:2.19	48.2	3.9	91.1	2.7	$+ 0.7$	${Ti}_{0.81} O_{2.19}$
4	${SiO}_{2}$	221.0	0.42:0.58	1.26:1.74	62.7	1.2	50.1	1.4	$- 0.6$	${Si}_{1.26} O_{1.74}$
5	${TiO}_{2}$	387.0	0.25:0.75	0.75:2.25	39.8	3.9	95.9	3.0	$+ 1.0$	${Ti}_{0.75} O_{2.25}$
6	${SiO}_{2}$	336.0	0.28:0.72	0.84:2.16	60.8	1.8	69.2	2.6	$+ 0.6$	${Si}_{0.84} O_{2.16}$
7	${TiO}_{2}$	251.0	0.39:0.61	1.17:1.83	42.6	2.8	72.9	1.6	$- 0.4$	${Ti}_{1.17} O_{1.83}$
8	${SiO}_{2}$	319.0	0.27:0.73	0.81:2.19	55.9	1.8	71.3	2.7	$+ 0.7$	${Si}_{0.81} O_{2.19}$
9	${TiO}_{2}$	400.0	0.31:0.69	0.93:2.07	46.9	3.7	83.5	2.2	$+ 0.2$	${Ti}_{0.93} O_{2.07}$
10	${SiO}_{2}$	313.0	0.31:0.69	0.93:2.07	60.8	1.7	63.7	2.2	$+ 0.2$	${Si}_{0.93} O_{2.07}$
11	${TiO}_{2}$	694.0	0.32:0.68	0.96:2.04	97.3	3.1	81.9	2.1	$+ 0.1$	${Ti}_{0.96} O_{2.04}$
12	${SiO}_{2}$	356.0	0.29:0.72	0.87:2.16	60.4	1.9	67.3	2.5	$+ 0.5$	${Si}_{0.87} O_{2.16}$
13	${TiO}_{2}$	323.0	0.32:0.68	0.96:2.04	42.1	3.3	81.9	2.1	$+ 0.1$	${Ti}_{0.96} O_{2.04}$
14	${SiO}_{2}$	326.0	0.32:0.68	0.96:2.04	59.9	1.8	62.1	2.1	$+ 0.1$	${Si}_{0.96} O_{2.04}$
15	${TiO}_{2}$	423.0	0.29:0.71	0.87:2.16	61.4	2.9	87.0	2.4	$+ 0.4$	${Ti}_{0.87} O_{2.16}$
16	${SiO}_{2}$	409.0	0.31:0.69	0.93:2.07	71.8	1.9	63.7	2.2	$+ 0.2$	${Si}_{0.93} O_{2.07}$
17	${TiO}_{2}$	398.0	0.29:0.71	0.87:2.16	46.4	3.6	87.0	2.4	$+ 0.4$	${Ti}_{0.87} O_{2.16}$
18	${SiO}_{2}$	342.0	0.32:0.68	0.96:2.04	50.6	2.2	62.1	2.1	$+ 0.1$	${Si}_{0.96} O_{2.04}$
19	${TiO}_{2}$	335.0	0.35:0.65	1.05:1.95	60.0	2.5	77.6	1.9	$+ 0.1$	${Ti}_{1.05} O_{1.95}$
20	${SiO}_{2}$	574.0	0.34:0.66	1.02:1.98	98.4	1.9	59.1	1.9	$- 0.1$	${Si}_{1.02} O_{1.98}$
21	${TiO}_{2}$	372.0	0.26:0.74	0.78:2.22	41.1	3.6	93.4	2.8	$+ 0.8$	${Ti}_{0.78} O_{2.22}$
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Applied Optics