Abstract

We show that the concentration of oxygen interstitials trapped in ${\mathrm{Sc}}_2{\mathrm{O}}_3$ films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in ${\mathrm{Sc}}_2{\mathrm{O}}_3$ films, in significantly high concentrations, i.e., $\sim {10}^{18}{\mathrm{cm}}^{-3}$. These results show a correlation between the increase of oxygen interstitials and the increase in stress and optical absorption in the films. ${\mathrm{Sc}}_2{\mathrm{O}}_3$ films with the lowest stress and optical absorption loss at 1 μm wavelength were obtained when using a low oxygen partial pressure and low beam voltage.

© 2014 Optical Society of America

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