Abstract

Silicon nitride films are prepared by a combined high-power impulse/unbalanced magnetron sputtering (HIPIMS/UBMS) deposition technique. Different unbalance coefficients and pulse on/off ratios are applied to improve the optical properties of the silicon nitride films. The refractive indices of the ${\mathrm{Si}}_3{\mathrm{N}}_4$ films vary from 2.17 to 2.02 in the wavelength ranges of 400–700 nm, and all the extinction coefficients are smaller than $1\times {10}^{-4}$. The Fourier transform infrared spectroscopy and x-ray diffractometry measurements reveal the amorphous structure of the ${\mathrm{Si}}_3{\mathrm{N}}_4$ films with extremely low hydrogen content and very low absorption between the near IR and middle IR ranges. Compared to other deposition techniques, ${\mathrm{Si}}_3{\mathrm{N}}_4$ films deposited by the combined HIPIMS/UBMS deposition technique possess the highest refractive index, the lowest extinction coefficient, and excellent structural properties. Finally a four-layer coating is deposited on both sides of a silicon substrate. The average transmittance from 3200 to 4800 nm is 99.0%, and the highest transmittance is 99.97% around 4200 nm.

© 2014 Optical Society of America

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