Abstract
Selective area growth (SAG) is performed to fabricate monolithically integrated
distributed feedback (DFB) laser array by adjusting the width of a SiO2 mask. A
strain-compensated-barrier structure is adopted to reduce the accumulated strain and improve the
quality of multi-quantum well materials. Varying the strip width of the SAG masks, the DFB laser
array with an average channel spacing of 1.47 nm is demonstrated by a conventional holographic
method with constant-pitch grating. The threshold current from 14 to 18 mA and over 35-dB side mode
suppression ratio (SMSR) are obtained for all DFB lasers in the array.
© 2013 Chinese Optics Letters
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