Abstract

High-strain InGaAs/GaAs quantum wells (QWs) are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Photoluminescence (PL) at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum (FWHM) of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 °C with V/III ratio of 42.7 and growth rate of 0.96 mm/h.

© 2014 Chinese Optics Letters

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