Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 12,
  • Issue 7,
  • pp. 072301-
  • (2014)

Realization of quantum efficiency enhanced PIN photodetector by assembling resonant waveguide grating

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate an InP/InGaAs PIN photodetector with enhanced quantum efficiency by assembling silicon resonant waveguide gratings for the application of polarization sensitive systems. The measured results show that quantum efficiency of the photodetector with silicon resonant waveguide gratings can be increased by 31.6% compared with that without silicon resonant waveguide gratings at the wavelength range of 1500 to 1600 nm for TE-polarization.

© 2014 Chinese Optics Letters

PDF Article
More Like This
InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

Zhen Sheng, Liu Liu, Joost Brouckaert, Sailing He, and Dries Van Thourhout
Opt. Express 18(2) 1756-1761 (2010)

High-efficiency dual-absorption InGaAs/InP photodetector incorporating GaAs/AlGaAs Bragg reflectors

Xiaofeng Duan, Yongqing Huang, Yufeng Shang, Jun Wang, and Xiaomin Ren
Opt. Lett. 39(8) 2447-2450 (2014)

Selecting detection wavelength of resonant cavity-enhanced photodetectors by guided-mode resonance reflectors

Kuo-Wei Lai, Yi-Shan Lee, Ying-Jhe Fu, and Sheng-Di Lin
Opt. Express 20(4) 3572-3579 (2012)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved