Abstract
In this letter, a new analytical method is presented to calculate of the
semiconductor optical gain coefficient. This method is particularly suitable for
theoretical analyses to determine the dependence of semiconductor gain on the total
carrier density and temperature in the semiconductor lasers. Also, the optical gain
functions for semiconductor optical gain coefficient are presented analytically. The
analytical evaluation is verified with numerical methods, which illustrates the
accuracy of these obtained analytical expressions.
© 2014 Chinese Optics Letters
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