Abstract
Modulation properties of terahertz waves going through a light excited high
resistivity silicon wafer are analyzed and measured. Free carrier lifetime of the
silicon wafer affects the modulation depth and speed of the terahertz wave. The
lifetime is reduced to less than 1 μs by thermal processing for high speed
modulation. Experimental results show that the response time and modulation depth of
the proposed modulating structure are close to 1 μs and 51%, respectively.
© 2014 Chinese Optics Letters
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