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The contribution of the polariton mechanism of the surface microstructuring of silicon by picosecond laser pulses

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Abstract

This paper discusses the experimental results of a study of the polariton mechanism of the microstructuring of silicon in the near-IR region when it is irradiated with picosecond laser pulses. The results are presented of a numerical model analysis of the excitation conditions of surface polaritons in a semiconductor when it is irradiated by a single picosecond pulse. It is determined that the polariton microstructuring mechanism of silicon has low probability when a picosecond laser pulse acts on it.

© 2014 Optical Society of America

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