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Characterization of frequency-tripled nanosecond pulsed Ti:sapphire laser injection seeded by a frequency-scanning cw Ti:sapphire laser by use of optogalvanic spectroscopy of silicon atoms

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Abstract

The performance of a narrow-linewidth nanosecond pulsed deep-UV coherent light source consisting of a frequency-tripled nanosecond pulsed Ti:sapphire laser injection seeded by a frequency-scanning cw Ti:sapphire laser has been characterized by using optogalvanic spectroscopy of silicon atoms as a diagnostic. The envelope of the optogalvanic spectrum indicates the pure Doppler broadening of silicon atoms, which was estimated to be as broad as 4GHz, without the broadening effect from the laser linewidth itself.

© 2006 Optical Society of America

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