Abstract
A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure.
© 2012 Optical Society of America
Full Article | PDF ArticleMore Like This
Shijie Deng and Alan P. Morrison
Opt. Lett. 37(18) 3876-3878 (2012)
Ian C. Sandall, Shiyu Xie, JingJing Xie, and Chee Hing Tan
Opt. Lett. 36(21) 4287-4289 (2011)
Qing Cai, Weike Luo, Ruyue Yuan, Haifan You, Qian Li, Mo Li, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng
Opt. Express 28(5) 6027-6035 (2020)