InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region

Baile Chen; Archie L. Holmes

doi:10.1364/OL.38.002750

Optics Letters
Vol. 38,
Issue 15,
pp. 2750-2753
(2013)
•https://doi.org/10.1364/OL.38.002750

InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region

Baile Chen and Archie L. Holmes

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Baile Chen and Archie L. Holmes, "InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region," Opt. Lett. 38, 2750-2753 (2013)

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Abstract

We report on InP-based p-type/intrinsic/n-type (PIN) photodiodes with a novel strain-compensated type-II InGaAs/GaAsSb quantum well active region. The device has optical response out to 3.0 μm, specific detectivity ( $D^{*}$ ) of $7.73 \times 10^{9} cm {Hz}^{0.5} / W$ at 290 K for 2.7 μm. These preliminary results show that this novel strain-compensated approach leads to similar performance when compared to a conventional strain-compensated approach.

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IR Photodiodes	New Strain-Compensated Photodiodes	Conventional Strain-Compensated Photodiodes	Other IR Photodiodes [15]
Dark current density	$2.6 mA / {cm}^{2}$ at $- 0.5 V$	$9.7 mA / {cm}^{2}$ at $- 0.5 V$	$2.8 mA / {cm}^{2}$ at $- 0.01 V$
$R_{0} A$	$42 Ω {cm}^{2}$	$132 Ω {cm}^{2}$	$3.2 Ω {cm}^{2}$
$D^{*}$ at 290 K at 2.7 μm	$7.73 \times 10^{9} Jones$	$3.83 \times 10^{9} Jones$	$6.6 \times 10^{9} Jones$
Cutoff wavelength	3.0 μm	3.2 μm	2.9 μm
$R$ at 2.7 μm	$0.23 A / W$	$0.23 A / W$	$0.51 A / W$
Absorption region	Type-II QWs	Type-II QWs	Relaxed InGaAs

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