Abstract

The optical constants below the fundamental absorption edge (up to 5 μm) of silicon single crystals and sputtered amorphous silicon films at high temperatures (up to 800°C) have been determined and the photothermal efficiencies of silicon–metal selective absorbers for thermal solar energy conversion calculated.

© 1977 Optical Society of America

Amorphous silicon as a selective absorber of solar energy: a spectral emissivity study

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Nano-Cr-film-based solar selective absorber with high photo-thermal conversion efficiency and good thermal stability

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Infrared spectral emittance profiles of spectrally selective solar absorbing layers at elevated temperatures

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Applications of thin graded-index films to solar absorbers

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Spectral selectivity of high-temperature solar absorbers

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