Abstract

Low-loss (1.4-cm⁻¹) single-mode rib waveguides in Al_xGa_1−xAs heterostructures are fabricated by liquid phase epitaxy, double anodization, and photolithographic techniques. Switching of optical channels between adjacent waveguides is accomplished with directional coupler switches controlled with electrodes laid over an isolating dielectric, making a metal-oxide-semiconductor (MOS) configuration. Complete switching is achieved with <20 V applied to a stepped Δβ reversal electrode configuration. A 2 × 4 switching matrix with low-loss lateral offsets of the waveguides is demonstrated. By laying out several optical switching and guiding experiments within a 128-μm stripe, we show that independent optical circuits can be packed with adequate optical isolation using centerline separations ≈10 μm.

© 1978 Optical Society of America

Single-mode GaAs-AlxGa₁₋xAs rib waveguide switches

J. C. Shelton, F. R. Reinhart, and R. A. Logan
Appl. Opt. 17(6) 890-891 (1978)

Dry processing of high resolution and high aspect ratio structures in GaAs-AlxGa₁₋xAs for integrated optics

S. Somekh and H. C. Casey
Appl. Opt. 16(1) 126-136 (1977)

Mirror-type optical branch and switch

H. Naitoh, K. Muto, and T. Nakayama
Appl. Opt. 17(1) 101-104 (1978)

Optical waveguide switch (3 × 3) for an optical switching system

H. Ogiwara and H. Yamamoto
Appl. Opt. 17(8) 1182-1186 (1978)

Wavelength dependence of GaAs directional couplers and electrooptic switches

F. J. Leonberger, J. P. Donnelly, and C. O. Bozler
Appl. Opt. 17(14) 2250-2254 (1978)