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Applied Optics

Applied Optics


  • Vol. 21, Iss. 16 — Aug. 15, 1982
  • pp: 2953–2959

Liquid-phase epitaxial growth of bismuth silicon oxide single-crystal film: a new optically activated optical switch

Kohji Tada, Yoshiki Kuhara, Masami Tatsumi, and Takeshi Yamaguchi  »View Author Affiliations

Applied Optics, Vol. 21, Issue 16, pp. 2953-2959 (1982)

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A single-crystalline double-layered structure of a pure (80-μm)/doped (39-μm)/pure Bi12SiO20 (BSO) substrate was grown for the first time by a new liquid-phase epitaxial griowth to form an optical waveguide. The waveguide layer is BSO doped with CaCO3 (0.1 wt. %) and Ga2O3 (0.197 wt. %) and has a refractive index 0.07 % higher than the substrate. The optical absorption coefficients were decreased by more than 1 order of magnitude by doping with the elements Ca and Ga. The high-sensitive photoconductivity of pure BSO was also reduced. Using these unique properties, we have constructed a new type of optically controlled planar optical switch.

© 1982 Optical Society of America

Original Manuscript: March 29, 1982
Published: August 15, 1982

Kohji Tada, Yoshiki Kuhara, Masami Tatsumi, and Takeshi Yamaguchi, "Liquid-phase epitaxial growth of bismuth silicon oxide single-crystal film: a new optically activated optical switch," Appl. Opt. 21, 2953-2959 (1982)

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