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Applied Optics

Applied Optics


  • Vol. 22, Iss. 23 — Dec. 1, 1983
  • pp: 3802–3804

Absorption measurement of ν2 + 2ν3 band of CH4 at 1.33 μm using an InGaAsP light emitting diode

Kinpui Chan, Hiromasa Ito, and Humio Inaba  »View Author Affiliations

Applied Optics, Vol. 22, Issue 23, pp. 3802-3804 (1983)

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The combination band of ν2 + 2ν3 of CH4 at 1.33 μm (7512 cm−1) was observed at 0.3-cm−1 resolution by a simple experimental arrangement using a near-infrared high-radiant InGaAsP light emitting diode (LED) and a Ge detector. Forty-six line centers were measured with accuracies of 0.03 cm−1. The assignment of these manifolds was made by inspection of the P, Q, and R branches. The experimental result indicates that the ν2 + 2ν3 band can be used for fully optical remote monitoring of methane using InGaAsP optical sources in conjunction with an ultralow-loss optical fiber network.

© 1983 Optical Society of America

Original Manuscript: July 28, 1983
Published: December 1, 1983

Kinpui Chan, Hiromasa Ito, and Humio Inaba, "Absorption measurement of ν2 + 2ν3 band of CH4 at 1.33 μm using an InGaAsP light emitting diode," Appl. Opt. 22, 3802-3804 (1983)

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