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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 22, Iss. 8 — Apr. 15, 1983
  • pp: 1232–1236

Silicon detector nonlinearity and related effects

A. R. Schaefer, E. F. Zalewski, and Jon Geist  »View Author Affiliations


Applied Optics, Vol. 22, Issue 8, pp. 1232-1236 (1983)
http://dx.doi.org/10.1364/AO.22.001232


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Abstract

An explanation is put forth for the observed nonlinearity in the red spectral region of the response of silicon photodiodes. Experiments are described to support the explanation; and the results, implications, and precautions indicated for the use of these diodes are given. Correlation of nonlinearity with spatial nonuniformity of response is demonstrated.

© 1983 Optical Society of America

History
Original Manuscript: November 27, 1982
Published: April 15, 1983

Citation
A. R. Schaefer, E. F. Zalewski, and Jon Geist, "Silicon detector nonlinearity and related effects," Appl. Opt. 22, 1232-1236 (1983)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-22-8-1232

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