Abstract
A novel etch process on silicon has been developed that consists of a conventional anisotropic etch process followed by stripping the protective oxide layer and etching the substrate once again in the anisotropic etch solution. As a result micron size patterns have been generated from a starting pattern size of 7 μm. These micron size patterns appear to have (111) sidewalls that can be used as templates for the graphoepitaxial process. We are currently exploring the possibility of generating submicron patterns using 2-μm size starting patterns.
© 1985 Optical Society of America
Full Article | PDF ArticleMore Like This
Sanjay Goel, John C. Pincenti, and David L. Naylor
Appl. Opt. 32(3) 318-321 (1993)
N. Rajkumar and J. N. McMullin
Appl. Opt. 34(14) 2556-2559 (1995)
Qiancheng Zhao, Yuewang Huang, and Ozdal Boyraz
J. Opt. Soc. Am. A 33(9) 1851-1859 (2016)